Добавена 31 мар, 20:59 ч.
Транзистор 20N60C3, MOS-N-FET, 650 V, 20.7 A, 0.19 Ohm.
8 лв
Доставка: Купувача
Състояние: Ново
Описание
Type Designator: SPP20N60C3 Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 208 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 20.7 A
Преглеждания: 575